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SI3590DV-T1-GE3

SI3590DV-T1-GE3

SI3590DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 2.5A 6-TSOP

non-compliant

SI3590DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38985 -
6,000 $0.36455 -
15,000 $0.35190 -
30,000 $0.34500 -
300 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.7A
Rds On (Max) @ Id, Vgs 77mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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