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SI3586DV-T1-E3

SI3586DV-T1-E3

SI3586DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 2.9A 6TSOP

non-compliant

SI3586DV-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.1A
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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