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SI3586DV-T1-E3

SI3586DV-T1-E3

SI3586DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V 2.9A 6TSOP

compliant

SI3586DV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.1A
Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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