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SI3552DV-T1-GE3

SI3552DV-T1-GE3

SI3552DV-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 6-TSOP

compliant

SI3552DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.35595 -
6,000 $0.33285 -
15,000 $0.32130 -
30,000 $0.31500 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.5A
Rds On (Max) @ Id, Vgs 105mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.15W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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