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SI3529DV-T1-E3

SI3529DV-T1-E3

SI3529DV-T1-E3

Vishay Siliconix

MOSFET N/P-CH 40V 2.5A 6-TSOP

non-compliant

SI3529DV-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 2.5A, 1.95A
Rds On (Max) @ Id, Vgs 125mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 205pF @ 20V
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
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