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SI3475DV-T1-GE3

SI3475DV-T1-GE3

SI3475DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 200V 0.95A 6-TSOP

compliant

SI3475DV-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 50 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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