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SI3460BDV-T1-GE3

SI3460BDV-T1-GE3

SI3460BDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 8A 6TSOP

compliant

SI3460BDV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38985 -
6,000 $0.36455 -
15,000 $0.35190 -
30,000 $0.34500 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 27mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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