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SI3459BDV-T1-E3

SI3459BDV-T1-E3

SI3459BDV-T1-E3

Vishay Siliconix

MOSFET P-CH 60V 2.9A 6TSOP

non-compliant

SI3459BDV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.35595 -
6,000 $0.33285 -
15,000 $0.32130 -
30,000 $0.31500 -
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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