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SI3446ADV-T1-E3

SI3446ADV-T1-E3

SI3446ADV-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 6A 6TSOP

non-compliant

SI3446ADV-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 37mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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