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SI3443BDV-T1-E3

SI3443BDV-T1-E3

SI3443BDV-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.6A 6TSOP

non-compliant

SI3443BDV-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.23862 -
6,000 $0.22408 -
15,000 $0.20954 -
30,000 $0.19936 -
5650 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 60mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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