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SI3421DV-T1-GE3

SI3421DV-T1-GE3

SI3421DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 8A 6TSOP

non-compliant

SI3421DV-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.20234 -
6,000 $0.19001 -
15,000 $0.17768 -
30,000 $0.16905 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2580 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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