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SI2371EDS-T1-GE3

SI2371EDS-T1-GE3

SI2371EDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 4.8A SOT-23

non-compliant

SI2371EDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.10400 -
6,000 $0.09850 -
15,000 $0.09025 -
30,000 $0.08475 -
75,000 $0.07650 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
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