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SI2365EDS-T1-BE3

SI2365EDS-T1-BE3

SI2365EDS-T1-BE3

Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

compliant

SI2365EDS-T1-BE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.42000 $0.42
500 $0.4158 $207.9
1000 $0.4116 $411.6
1500 $0.4074 $611.1
2000 $0.4032 $806.4
2500 $0.399 $997.5
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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