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SI2323CDS-T1-GE3

SI2323CDS-T1-GE3

SI2323CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 6A SOT23-3

compliant

SI2323CDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.32205 -
6,000 $0.30115 -
15,000 $0.29070 -
30,000 $0.28500 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 39mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 1090 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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