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SI2316BDS-T1-BE3

SI2316BDS-T1-BE3

SI2316BDS-T1-BE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

non-compliant

SI2316BDS-T1-BE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.62000 $0.62
500 $0.6138 $306.9
1000 $0.6076 $607.6
1500 $0.6014 $902.1
2000 $0.5952 $1190.4
2500 $0.589 $1472.5
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta), 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 15 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 1.66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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