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SI2312CDS-T1-GE3

SI2312CDS-T1-GE3

SI2312CDS-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 6A SOT23-3

compliant

SI2312CDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17148 -
6,000 $0.16103 -
15,000 $0.15058 -
30,000 $0.14326 -
75,000 $0.14250 -
8 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31.8mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta), 2.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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