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SI2312BDS-T1-E3

SI2312BDS-T1-E3

SI2312BDS-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 3.9A SOT23-3

non-compliant

SI2312BDS-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.17653 -
6,000 $0.16577 -
15,000 $0.15501 -
30,000 $0.14748 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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