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SI2307BDS-T1-GE3

SI2307BDS-T1-GE3

SI2307BDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 2.5A SOT23-3

non-compliant

SI2307BDS-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.25425 -
6,000 $0.23775 -
15,000 $0.22950 -
30,000 $0.22500 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 78mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 15 V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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