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SI1965DH-T1-GE3

SI1965DH-T1-GE3

SI1965DH-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

compliant

SI1965DH-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19855 -
6,000 $0.18645 -
15,000 $0.17435 -
30,000 $0.16588 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 6V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
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