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SI1965DH-T1-GE3

SI1965DH-T1-GE3

SI1965DH-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

non-compliant

SI1965DH-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19855 -
6,000 $0.18645 -
15,000 $0.17435 -
30,000 $0.16588 -
0 items
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Name Value
Product Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 6V
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
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