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SI1926DL-T1-GE3

SI1926DL-T1-GE3

SI1926DL-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 60V 0.37A SOT363

compliant

SI1926DL-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16245 -
6,000 $0.15255 -
15,000 $0.14265 -
30,000 $0.13572 -
75,000 $0.13500 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 370mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V
Power - Max 510mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
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