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SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.3A SOT-363

non-compliant

SI1922EDH-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16245 -
6,000 $0.15255 -
15,000 $0.14265 -
30,000 $0.13572 -
75,000 $0.13500 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6
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