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SI1411DH-T1-GE3

SI1411DH-T1-GE3

SI1411DH-T1-GE3

Vishay Siliconix

MOSFET P-CH 150V 420MA SOT363

non-compliant

SI1411DH-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.38816 -
6,000 $0.36297 -
15,000 $0.35037 -
30,000 $0.34350 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 420mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 6.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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