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SI1062X-T1-GE3

SI1062X-T1-GE3

SI1062X-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V SC89-3

non-compliant

SI1062X-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.08800 -
6,000 $0.07920 -
15,000 $0.07040 -
30,000 $0.06600 -
75,000 $0.05852 -
150,000 $0.05632 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.7 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 10 V
FET Feature -
Power Dissipation (Max) 220mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
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