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SI1050X-T1-GE3

SI1050X-T1-GE3

SI1050X-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 1.34A SC89-6

non-compliant

SI1050X-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.18755 -
6,000 $0.17545 -
15,000 $0.16335 -
30,000 $0.15488 -
92 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 1.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 86mOhm @ 1.34A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.6 nC @ 5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 585 pF @ 4 V
FET Feature -
Power Dissipation (Max) 236mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
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