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SI1029X-T1-GE3

SI1029X-T1-GE3

SI1029X-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 60V SC89-6

compliant

SI1029X-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.19855 -
6,000 $0.18645 -
15,000 $0.17435 -
30,000 $0.16588 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 305mA, 190mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89 (SOT-563F)
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