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SI1016X-T1-E3

SI1016X-T1-E3

SI1016X-T1-E3

Vishay Siliconix

MOSFET N/P-CH 20V SOT563F

non-compliant

SI1016X-T1-E3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 485mA, 370mA
Rds On (Max) @ Id, Vgs 700mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89 (SOT-563F)
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