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SI1012CR-T1-GE3

SI1012CR-T1-GE3

SI1012CR-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V SC75A

compliant

SI1012CR-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.11440 -
6,000 $0.10835 -
15,000 $0.09928 -
30,000 $0.09323 -
75,000 $0.08415 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 396mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 10 V
FET Feature -
Power Dissipation (Max) 240mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-75A
Package / Case SC-75, SOT-416
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