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SI1011X-T1-GE3

SI1011X-T1-GE3

SI1011X-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V SC89-3

compliant

SI1011X-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 640mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 62 pF @ 6 V
FET Feature -
Power Dissipation (Max) 190mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-89-3
Package / Case SC-89, SOT-490
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