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IRLD110

IRLD110

IRLD110

Vishay Siliconix

MOSFET N-CH 100V 1A 4DIP

non-compliant

IRLD110 Pricing & Ordering

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500 $0 $0
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2500 $0 $0
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 540mOhm @ 600mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
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