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IRF830LPBF

IRF830LPBF

IRF830LPBF

Vishay Siliconix

MOSFET N-CH 500V 4.5A TO262-3

non-compliant

IRF830LPBF Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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