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IRF620L

IRF620L

IRF620L

Vishay Siliconix

MOSFET N-CH 200V 5.2A I2PAK

compliant

IRF620L Pricing & Ordering

Quantity Unit Price Ext. Price
450 $1.28700 $579.15
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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