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2N7002E-T1-GE3

2N7002E-T1-GE3

2N7002E-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 240MA TO236

non-compliant

2N7002E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.16245 -
6,000 $0.15255 -
15,000 $0.14265 -
30,000 $0.13572 -
75,000 $0.13500 -
0 items
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 5 V
FET Feature -
Power Dissipation (Max) 350mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-236
Package / Case TO-236-3, SC-59, SOT-23-3
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