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2N6661-E3

2N6661-E3

2N6661-E3

Vishay Siliconix

MOSFET N-CH 90V 860MA TO39

compliant

2N6661-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 90 V
Current - Continuous Drain (Id) @ 25°C 860mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V
FET Feature -
Power Dissipation (Max) 725mW (Ta), 6.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-39
Package / Case TO-205AD, TO-39-3 Metal Can
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