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TW045N120C,S1F

TW045N120C,S1F

TW045N120C,S1F

G3 1200V SIC-MOSFET TO-247 45MO

non-compliant

TW045N120C,S1F Pricing & Ordering

Quantity Unit Price Ext. Price
1 $24.84000 $24.84
500 $24.5916 $12295.8
1000 $24.3432 $24343.2
1500 $24.0948 $36142.2
2000 $23.8464 $47692.8
2500 $23.598 $58995
180 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 6.7mA
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 18 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
FET Feature -
Power Dissipation (Max) 182W (Tc)
Operating Temperature 175°C
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
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