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TPCC8104,L1Q

TPCC8104,L1Q

TPCC8104,L1Q

MOSFET P-CH 30V 20A 8TSON

non-compliant

TPCC8104,L1Q Pricing & Ordering

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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) +20V, -25V
Input Capacitance (Ciss) (Max) @ Vds 2260 pF @ 10 V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.1x3.1)
Package / Case 8-PowerVDFN
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