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TPC6010-H(TE85L,FM

TPC6010-H(TE85L,FM

TPC6010-H(TE85L,FM

MOSFET N-CH 60V 6.1A VS-6

compliant

TPC6010-H(TE85L,FM Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 6.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 59mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.3V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VS-6 (2.9x2.8)
Package / Case SOT-23-6 Thin, TSOT-23-6
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