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TK8Q65W,S1Q

TK8Q65W,S1Q

TK8Q65W,S1Q

MOSFET N-CH 650V 7.8A IPAK

compliant

TK8Q65W,S1Q Pricing & Ordering

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1 $1.56000 $1.56
7 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 670mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 300 V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Stub Leads, IPak
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