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TK5Q60W,S1VQ

TK5Q60W,S1VQ

TK5Q60W,S1VQ

MOSFET N CH 600V 5.4A IPAK

non-compliant

TK5Q60W,S1VQ Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 3.7V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-Pak
Package / Case TO-251-3 Stub Leads, IPak
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