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TK55D10J1(Q)

TK55D10J1(Q)

TK55D10J1(Q)

MOSFET N-CH 100V 55A TO220

compliant

TK55D10J1(Q) Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 55A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.5mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220(W)
Package / Case TO-220-3
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