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TK4A55D(STA4,Q,M)

TK4A55D(STA4,Q,M)

TK4A55D(STA4,Q,M)

MOSFET N-CH 550V 4A TO220SIS

compliant

TK4A55D(STA4,Q,M) Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.88Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25 V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
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