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TK16E60W,S1VX

TK16E60W,S1VX

TK16E60W,S1VX

MOSFET N-CH 600V 15.8A TO220

non-compliant

TK16E60W,S1VX Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 130W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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