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TK10P60W,RVQ

TK10P60W,RVQ

TK10P60W,RVQ

MOSFET N CH 600V 9.7A DPAK

compliant

TK10P60W,RVQ Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $1.24740 -
11089 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
FET Feature Super Junction
Power Dissipation (Max) 80W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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