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TK10J80E,S1E

TK10J80E,S1E

TK10J80E,S1E

MOSFET N-CH 800V 10A TO3P

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TK10J80E,S1E Pricing & Ordering

Quantity Unit Price Ext. Price
25 $2.48640 $62.16
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(N)
Package / Case TO-3P-3, SC-65-3
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