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TPS1101DR

TPS1101DR

TPS1101DR

Texas Instruments

MOSFET P-CH 15V 2.3A 8SOIC

compliant

TPS1101DR Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.97020 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 15 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.25 nC @ 10 V
Vgs (Max) +2V, -15V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 791mW (Ta)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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