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CSD25213W10

CSD25213W10

CSD25213W10

Texas Instruments

MOSFET P-CH 20V 1.6A 4DSBGA

non-compliant

CSD25213W10 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.12705 -
6,000 $0.11935 -
15,000 $0.11165 -
15196 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 4.5 V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 478 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA
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