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CSD19537Q3

CSD19537Q3

CSD19537Q3

Texas Instruments

MOSFET N-CH 100V 9.7A/50A 8VSON

compliant

CSD19537Q3 Pricing & Ordering

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2,500 $0.50540 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON (3.3x3.3)
Package / Case 8-PowerVDFN
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