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CSD19536KTTT

CSD19536KTTT

CSD19536KTTT

Texas Instruments

MOSFET N-CH 100V 200A DDPAK

compliant

CSD19536KTTT Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.52000 $6.52
500 $6.4548 $3227.4
1000 $6.3896 $6389.6
1500 $6.3244 $9486.6
2000 $6.2592 $12518.4
2500 $6.194 $15485
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000 pF @ 50 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DDPAK/TO-263-3
Package / Case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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