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TSM4NB60CH X0G

TSM4NB60CH X0G

TSM4NB60CH X0G

MOSFET N-CHANNEL 600V 4A TO251

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TSM4NB60CH X0G Pricing & Ordering

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7,500 $0.30206 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 500 pF @ 25 V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Stub Leads, IPak
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