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STP6N65M2

STP6N65M2

STP6N65M2

STMicroelectronics

MOSFET N-CH 650V 4A TO220

compliant

STP6N65M2 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.98000 $1.98
50 $1.62280 $81.14
100 $1.47110 $147.11
500 $1.16748 $583.74
1,000 $0.98532 -
2,500 $0.92460 -
5,000 $0.89424 -
957 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 226 pF @ 100 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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