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STI6N80K5

STI6N80K5

STI6N80K5

STMicroelectronics

MOSFET N-CH 800V 4.5A I2PAK

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STI6N80K5 Pricing & Ordering

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1,000 $1.28520 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) @ Vds 255 pF @ 100 V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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