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STB11NM60N-1

STB11NM60N-1

STB11NM60N-1

STMicroelectronics

MOSFET N-CH 600V 10A I2PAK

non-compliant

STB11NM60N-1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $2.01250 -
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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 450mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 50 V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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